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| AP4501SD Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching G2 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID D1 30V 27m 7A -30V 49m -5A D2 PDIP-8 S1 S2 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 20 7 5.8 40 2 0.016 -55 to 150 -55 to 150 P-channel -30 20 -5 -4.2 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Max. Value 62.5 Unit /W Data and specifications subject to change without notice 200221031 AP4501SD N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 1 0.03 27 50 3 1 25 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A 12 8.4 2.1 4.7 6 5.2 18.8 4.4 645 150 95 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25, IS=1.7A, VGS=0V Min. Typ. Max. Units 1.7 1.2 A V Forward On Voltage 2 AP4501SD P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current ( T=25 C) j Drain-Source Leakage Current ( T=150 C) j o o Test Conditions VGS=0V, ID=-250uA 2 Min. Typ. Max. Units -30 -1 -0.03 49 75 -3 -1 -25 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5.3A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-5.3A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz 8 9 3.5 2 12 20 45 27 760 330 90 Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25, IS=-1.7A, VGS=0V Min. Typ. Max. Units -1.7 -1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in2 copper pad of FR4 board ; 90/W when mounted on Min. copper pad. AP4501SD N-Channel 40 36 10V 8.0V 6.0V 5.0V 30 10V 8.0V 6.0V 5.0V ID , Drain Current (A) ID , Drain Current (A) 24 20 V GS =4. 0 V V GS =4.0V 12 10 T C =25 o C 0 0 1 2 3 4 T C =150 o C 0 0 2 3 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2 I D =7.0A T C =25 I D =7.0A V GS = 10V 40 Normalized RDS(ON) 2 5 8 11 70 1.4 RDS(ON) (m ) 0.8 10 0.2 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP4501SD N-Channel 2.4 8 6 1.8 ID , Drain Current (A) PD (W) 4 1.2 2 0.6 0 25 50 75 100 125 150 0 0 50 100 150 T c , Case Temperature ( C) o T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 0.2 100us Normalized Thermal Response (Rthja) 10 0.1 1ms 0.1 0.05 ID (A) 1 10ms 100ms 1s 0.02 0.01 PDM 0.01 Single Pulse t T 0.1 T C =25 o C Single Pulse 0.01 0.1 1 10 10s DC Duty Factor = t/T Peak Tj = P DM x R thja + Ta Rthja=90 C/W o 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4501SD N-Channel f=1.0MHz 12 10000 I D =7.0A VGS , Gate to Source Voltage (V) 9 6 C (pF) V DS= 1 6 V V DS =20V V DS =24V 1000 Ciss 100 3 Coss Crss 0 0 4 8 12 16 10 1 7 13 19 25 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 2.5 10 2 VGS(th) (V) T C = 150 C IS(A) 1 o T C =25 C o 1.5 1 0.1 0.5 0.01 0 0.4 0.8 1.2 0 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP4501SD N-Channel VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G + 10V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 4.5V D 0.8 x RATED VDS G S + QGS VGS QGD 1~ 3 mA I G I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform AP4501SD P-Channel 36 40 -10V -8.0V -6.0V 30 -10V -8.0V -6.0V -ID , Drain Current (A) 24 -ID , Drain Current (A) -5.0V 20 -5.0V V GS = - 4. 0 V 10 12 V GS = - 4. 0 V T C =25 o C 0 0 1 2 3 4 T C =150 o C 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.8 I D =-5.0A T C =25 1.6 I D =-5.0A V GS = -10V Normalized RDS(ON) 90 1.4 RDS(ON) (m ) 1.2 60 1 0.8 30 3 5 7 9 11 0.6 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP4501SD P-Channel 6 2.4 5 1.8 -ID , Drain Current (A) 4 3 2 0.6 1 0 25 50 75 100 125 150 PD (W) 1.2 0 0 50 100 150 T c , Case Temperature ( C) o T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 0.2 Normalized Thermal Response (R thja) 100us 10 0.1 1ms -ID (A) 10ms 1 0.1 0.05 0.02 100ms 1s 0.1 0.01 PDM Single Pulse 0.01 t T 10s T C =25 o C Single Pulse 0.01 0.1 1 10 100 Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=90oC/W DC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4501SD P-Channel 14 10000 f=1.0MHz 12 I D =-5.0A -VGS , Gate to Source Voltage (V) 10 8 C (pF) V DS =-10V V DS =-15V V DS =-20V 1000 Ciss Coss 6 100 4 Crss 2 0 0 5 10 15 20 25 30 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 2.5 10 2 1 -VGS(th) (V) 1.3 -IS(A) T j =150 C o T j =25 C o 1.5 1 0.1 0.5 0.01 0.1 0.4 0.7 1 0 -50 0 50 100 150 -V SD (V) T j , Junction Temperature ( C ) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP4501SD P-Channel VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G 10% S -10 V VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG -4.5V D G S -1~-3mA I G 0.5 x RATED VDS QGS QGD VGS ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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